As a 3D flash memory leader, Toshiba continues to refine its BiCS FLASH offerings. The next milestone on its BiCS FLASH development roadmap will feature the industry’s largest capacity3, a 1TB product with a 16-die stacked architecture, in a single package. Plans call for sample shipments to commence in April of this year. Toshiba’s new 512Gb BiCS FLASH device is based on its cutting-edge, third generation, 64-layer stacking process that realizes a 65 percent larger capacity per unit chip size than the company’s 48-layer, 256Gb (32 gigabyte) device. This increases memory capacity per silicon wafer and leads to a reduction of cost-per-bit.
Saturday, February 25, 2017
Toshiba Now Shipping Samples of 64-Layer, 512Gb 3D Flash Memory
Toshiba America Electronic Components, Inc. today announced that it has added a 512 gigabit (Gb)1 (64 gigabyte), 64-layer device with 3-bit-per-cell triple-level cell (TLC) technology to its industry-leading BiCS FLASH™ product line. This technology will enable a 1-terabyte (TB) chip solution. BiCS FLASH is a three-dimensional (3D) flash memory stacked cell structure2 and is suitable for applications that require high capacity and performance, such as enterprise and consumer solid state drives, including Toshiba’s own SSD portfolio. Sample shipments of the new 512Gb devices have begun, with mass production scheduled for the second half of 2017.
As a 3D flash memory leader, Toshiba continues to refine its BiCS FLASH offerings. The next milestone on its BiCS FLASH development roadmap will feature the industry’s largest capacity3, a 1TB product with a 16-die stacked architecture, in a single package. Plans call for sample shipments to commence in April of this year. Toshiba’s new 512Gb BiCS FLASH device is based on its cutting-edge, third generation, 64-layer stacking process that realizes a 65 percent larger capacity per unit chip size than the company’s 48-layer, 256Gb (32 gigabyte) device. This increases memory capacity per silicon wafer and leads to a reduction of cost-per-bit.
As a 3D flash memory leader, Toshiba continues to refine its BiCS FLASH offerings. The next milestone on its BiCS FLASH development roadmap will feature the industry’s largest capacity3, a 1TB product with a 16-die stacked architecture, in a single package. Plans call for sample shipments to commence in April of this year. Toshiba’s new 512Gb BiCS FLASH device is based on its cutting-edge, third generation, 64-layer stacking process that realizes a 65 percent larger capacity per unit chip size than the company’s 48-layer, 256Gb (32 gigabyte) device. This increases memory capacity per silicon wafer and leads to a reduction of cost-per-bit.